Nano-Optoelectronics

Nano-Optoelectronics

Einband:
Kartonierter Einband
EAN:
9783642628078
Untertitel:
Concepts, Physics and Devices
Herausgeber:
Springer Berlin Heidelberg
Auflage:
Softcover reprint of the original 1st ed. 2002
Anzahl Seiten:
464
Erscheinungsdatum:
28.10.2012
ISBN:
3642628079

This book traces the quest to use nanostructured media for novel and improved optoelectronic devices. Starting with the invention of the heterostructure laser, the progression via thin films to quasi zero-dimensional quantum dots has led to novel device concepts and tremendous improvements in device performance. Along the way sophisticated methods of material preparation and characterization have been developed. Novel physical phenomena have emerged and are now used in devices such as lasers and optical amplifiers. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.

This book deals with nano-opto-electronic devices These have huge potential for future applications in photonics and optoelectronics The related field of heterostructure lasers was the topic of the Nobel Prize in Physics in 2000 The book begins with a contribution by the Nobel Prize winner Alferov It will appeal to researchers, advanced students and engineers Includes supplementary material: sn.pub/extras

Autorentext
Professor Dr. Marius Grundman studied physics at the Technical University of Berlin. He worked on the epitaxy and characterization of electronic and optical properties of semiconductor heterostructures and nanostructures as well as devices made from them. He has been Professor of Experimental Physics at the University of Leipzig since 2000.

Inhalt
I Concepts.- 1 The History of Heterostructure Lasers.- 2 Stress-Engineered Quantum Dots: Nature's Way.- II Physics.- 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy.- 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001).- 5 Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots.- 6 X-ray Characterization of Group III-Nitrides (Al,In,Ga)N.- 7 Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots.- 8 Magneto-Tunneling Spectroscopy of Self-Assembled InAs Dots.- 9 Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots.- 10 Optical Properties of Self-Organized Quantum Dots.- 11 High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors.- III Devices.- 12 Theory of Quantum Dot Lasers.- 13 Long-Wavelength InGaAs/GaAs Quantum Dot Lasers.- 14 InP/GalnP Quantum Dot Lasers.- 15 High Power Quantum Dot Lasers.- 16 Inter-Sublevel Transitions in Quantum Dots and Device Applications.- 17 Progress in Growth and Physics of Nitride-Based Quantum Dots.- 18 Ultrafast Optical Properties of Quantum Dot Amplifiers.


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